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| Cree(R) EZ400TM LED Data Sheet CXXXEZ400-SXX000 Cree's EZBrightTM LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree's proprietary optical design and device technology to deliver superior value for high-intensity LEDs. The optical design maximizes light extraction efficiency and enables a Lambertian radiation pattern. Additionally, these LEDs are die attachable with conductive epoxy, solder paste or solder preforms, as well as the flux eutectic method. These vertically structured, low forward voltage LED chips are approximately 100 microns in height. Cree's EZTM chips are tested for conformity to optical and electrical specifications. These LEDs are useful in a broad range of applications, such as general illumination, automotive lighting and LCD backlighting. FEATURES * * * * * * * EZBright Power Chip LED Rf Performance - 60 mW min. @ 150 mA - 450 & 460 nm Lambertian Radiation Conductive Epoxy, Solder Paste or Preforms, or Flux Eutectic Attach Thin 100-m Chip Low Forward Voltage - 3.5 V Typical at 150 mA Single Wire Bond Structure Maximum DC Forward Current - 200 mA APPLICATIONS * General Illumination - - - - - * * * Automobile Aircraft Decorative Lighting Task Lighting Outdoor Illumination White LEDs Crosswalk Signals Backlighting CXXXEZ400-SXX000 Chip Diagram Top View EZBright LED Chip 380 x 380 m2 Backside Metallization Gold Bond Pad 100 m Bottom View Die Cross Section .CPR3DJ Rev Data Sheet: Cathode (-) t = 100 m Anode (+); 3 m AuSn Subject to change without notice. www.cree.com Maximum Ratings at TA = 5C Note DC Forward Current Peak Forward Current LED Junction Temperature Reverse Voltage Operating Temperature Range Storage Temperature Range Typical Electrical/Optical Characteristics at TA = 5C, If = 50 mA Part Number Forward Voltage (VF, V) Min. C450EZ600-Sxx000 C460EZ600-Sxx000 Mechanical Specifications Description P-N Junction Area (m) Chip Area (m) Chip Thickness (m) Top Au Bond Pad Diameter (m) Au Bond Pad Thickness (m) Back Contact Metal Area (m) Back Contact Metal Thickness (m) 3.1 3.1 Typ. 3.5 3.5 Max. 4.1 4.1 Note CXXXEZ400-SXX000 200 mA 350 mA Note 3 145C 5V -40C to +100C -40C to +120C Reverse Current [I(Vr=5 V), A] Max. 2 2 Full Width Half Max (D, nm) Typ. 21 21 CxxxEZ600-Sxx000 Dimension 350 x 350 380 x 380 100 100 3.0 380 x 380 3.0 Tolerance 40 40 25 15 1.0 40 1.0 Notes: 1. 2. 3. Maximum ratings are package-dependent. The above ratings were determined using a Au-plated TO39 header without an encapsulant for characterization. Ratings for other packages may differ. The junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325C (< 5 seconds). See Cree EZBright Applications Note for assembly-process information. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 150 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average expected by the manufacturer in large quantities and are provided for information only. All measurements were made using a Au-plated TO39 header without an encapsulant. Optical characteristics measured in an integrating sphere using Illuminance E. This peak forward current specification is based on a 400-ms pulse width at a 1/5-duty cycle with a junction temperature of 65C. Copyright (c) 2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright, EZ, and EZ400 are trademarks of Cree, Inc. Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com CPR3DJ Rev. - Standard Bins for CXXXEZ400-SXX000 LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only one bin. Sorted die kit (CXXXEZ400-SXX000) orders may be filled with any or all bins (CxxxEZ400-0xxx) contained in the kit. All radiant flux and all dominant wavelength values shown and specified are at If = 150 mA. Radiant flux values are measured using Au-plated TO39 headers without an encapsulant. C450EZ400-S06000 C450EZ400-0213 C450EZ400-0214 C450EZ400-0210 C450EZ400-0206 C450EZ400-0202 C450EZ400-0215 C450EZ400-0211 C450EZ400-0207 C450EZ400-0203 C450EZ400-0216 C450EZ400-0212 C450EZ400-0208 C450EZ400-0204 Radiant Flux 105 mW C450EZ400-0209 90 mW C450EZ400-0205 75 mW C450EZ400-0201 60 mW 445 nm 447.5 nm 450 nm Dominant Wavelength C460EZ400-S06000 452.5 nm 455 nm C460EZ400-0213 C460EZ400-0214 C460EZ400-0210 C460EZ400-0206 C460EZ400-0202 C460EZ400-0215 C460EZ400-0211 C460EZ400-0207 C460EZ400-0203 C460EZ400-0216 C460EZ400-0212 C460EZ400-0208 C460EZ400-0204 Radiant Flux 105 mW C460EZ400-0209 90 mW C460EZ400-0205 75 mW C460EZ400-0201 60 mW 455 nm 457.5 nm 460 nm Dominant Wavelength 462.5 nm 465 nm Copyright (c) 2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright, EZ, and EZ400 are trademarks of Cree, Inc. Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com 3 CPR3DJ Rev. - Characteristic Curves These are representative measurements for the EZBright400. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins. Forward Current vs Forward Voltage 200 175 150 125 100 75 50 25 0 0.0 100% Relative Light Intensity vs Junction Temperature Relative Light Intensity (%) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 95% 90% 85% 80% 75% 70% If (mA) Vf (V) 25 50 Junction Temperature (C) 75 100 125 150 140 120 Relative Intensity vs Forward Current Dominant Wavelength Shift vs Junction Temperature 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 100 80 60 40 20 0 0 25 50 75 100 125 150 175 200 Wavelength Shift (nm) % Relative Intensity 25 50 If (mA) 3.0 2.5 2.0 Junction Temperature (C) 75 100 125 150 Dominant Wavelength Shift vs Forward Current 0.0 Voltage Shift vs Junction Temperature -0.1 1.5 1.0 0.5 0.0 -0.5 0 25 50 75 If (mA) 100 125 150 175 200 Voltage Shift (V) Shift (nm) -0.2 -0.3 -0.4 -0.5 25 50 Junction Temperature (C) 75 100 125 150 Copyright (c) 2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright, EZ, and EZ400 are trademarks of Cree, Inc. Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com 4 CPR3DJ Rev. - Radiation Pattern This is a representative radiation pattern for the EZBright Power Chip LED product. Actual patterns will vary slightly for each chip. Copyright (c) 2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright, EZ, and EZ400 are trademarks of Cree, Inc. Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com 5 CPR3DJ Rev. - |
Price & Availability of CXXXEZ400-SXX000
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